Current mass production of single crystal is mostly using the technique of quasi-mono seed crystal casting. In this technology, first, place the seed crystal and doped silicon in a crucible, the seed crystal usually is located at the bottom of crucible, and then introduce heating device to melt the silicon, at the same time, keep the seed crystal not completely melting down, in the end, lower the temperature, adjust the temperature gradient between the solid and the liquid, ensure that the single crystal begins to grow from the location of the seed crystal.


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